Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; PDFN56

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: WMB175N10HG4
    Manufacturer: WAYON
    Manufacturer code: WMB175N10HG4
    • Mounting
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • On-state resistance
    • Reverse recovery time
    • Gate charge

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    1.40 €

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    Specification for Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; PDFN56

    Mounting SMD
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Drain-source voltage 100V
    Drain current 29A
    Pulsed drain current 184A
    On-state resistance 17.5mΩ
    Reverse recovery time 30ns
    Gate charge 17nC