Transistor: N-MOSFET

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: TSM60NB190CI C0G
    Manufacturer: TAIWAN SEMICONDUCTOR
    Manufacturer code: TSM60NB190CI C0G
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET

    Mounting THT
    Case TO220FP
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Drain-source voltage 600V
    Drain current 10.8A
    Power dissipation 33.8W
    On-state resistance 190mΩ
    Gate charge 31nC