Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Multiples:
1.0
Minimum quantity:
1.0
Product code:
TSG65N190CR RVG
Manufacturer: TAIWAN SEMICONDUCTOR
Manufacturer code: TSG65N190CR RVG
Specification for Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Mounting | SMD |
Kind of package | tape |
Polarisation | unipolar |
Type of transistor | N-JFET |
Kind of channel | enhanced |
Features of semiconductor devices | Kelvin terminal |
Technology | GaN |
Drain-source voltage | 650V |
Drain current | 11A |
Pulsed drain current | 19A |
On-state resistance | 190mΩ |
Gate charge | 2.2nC |