Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Multiples:
1.0
Minimum quantity:
1.0
Product code:
TSG65N110CE RVG
Manufacturer: TAIWAN SEMICONDUCTOR
Manufacturer code: TSG65N110CE RVG
Specification for Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Mounting | SMD |
Kind of package | tape |
Polarisation | unipolar |
Type of transistor | N-JFET |
Kind of channel | enhanced |
Features of semiconductor devices | Kelvin terminal |
Technology | GaN |
Drain-source voltage | 650V |
Drain current | 18A |
Pulsed drain current | 35A |
On-state resistance | 110mΩ |
Gate charge | 4nC |