Transistor: N-MOSFET
Multiples:
1.0
Minimum quantity:
1.0
Product code:
SIRC16DP-T1-GE3
Manufacturer: VISHAY
Manufacturer code: SIRC16DP-T1-GE3
Specification for Transistor: N-MOSFET
Mounting | SMD |
Case | PowerPAK® SO8 |
Kind of package | reel, tape |
Polarisation | unipolar |
Kind of channel | enhanced |
Technology | TrenchFET® |
Drain-source voltage | 25V |
Drain current | 60A |
Pulsed drain current | 250A |
Power dissipation | 34.7W |
On-state resistance | 1.4mΩ |
Gate charge | 105nC |