Transistor: N-MOSFET

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: SIRA90DP-T1-GE3
    Manufacturer: VISHAY
    Manufacturer code: SIRA90DP-T1-GE3
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    2.12 € 2.12 € (wo VAT) 2.12 EUR

    2.12 €

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    Specification for Transistor: N-MOSFET

    Mounting SMD
    Case PowerPAK® SO8
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology TrenchFET®
    Drain-source voltage 30V
    Drain current 100A
    Pulsed drain current 400A
    Power dissipation 66.6W
    On-state resistance 1.15mΩ
    Gate charge 153nC