Transistor: N-MOSFET
Multiples:
1.0
Minimum quantity:
1.0
Product code:
SIHD4N80E-GE3
Manufacturer: VISHAY
Manufacturer code: SIHD4N80E-GE3
Specification for Transistor: N-MOSFET
Mounting | SMD |
Case | DPAK, TO252 |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Drain-source voltage | 800V |
Drain current | 2.7A |
Pulsed drain current | 11A |
Power dissipation | 69W |
Gate charge | 32nC |