Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; 2.9W; SO8

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: SI4286DY-T1-GE3
    Manufacturer: VISHAY
    Manufacturer code: SI4286DY-T1-GE3
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    0.00 € 0.00 € (wo VAT) 0.0 EUR

    0.00 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; 2.9W; SO8

    Mounting SMD
    Case SO8
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET x2
    Kind of channel enhanced
    Drain-source voltage 40V
    Drain current 5.6A
    Power dissipation 2.9W
    On-state resistance 32.5mΩ
    Gate charge 3.3nC