Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; TSOP6
Multiples:
3000.0
Minimum quantity:
3000.0
Product code:
SI3429EDV-T1-GE3
Manufacturer: VISHAY
Manufacturer code: SI3429EDV-T1-GE3
Product downloads
Specification for Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; TSOP6
Mounting | SMD |
Case | TSOP6 |
Kind of package | reel, tape |
Polarisation | unipolar |
Type of transistor | P-MOSFET |
Kind of channel | enhanced |
Features of semiconductor devices | ESD protected gate |
Drain-source voltage | -20V |
Drain current | -8A |
Pulsed drain current | -40A |
Power dissipation | 2.7W |
On-state resistance | 38mΩ |