Transistor: P-MOSFET

    Multiples: 3000.0
    Minimum quantity: 3000.0
    Product code: SI2333DS-T1-GE3
    Manufacturer: VISHAY
    Manufacturer code: SI2333DS-T1-GE3
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    0.00 € 0.00 € (wo VAT) 0.0 EUR

    0.00 €

    This combination does not exist.

    Add to Cart

    Specification for Transistor: P-MOSFET

    Mounting SMD
    Case SOT23
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor P-MOSFET
    Kind of channel enhanced
    Technology TrenchFET®
    Drain-source voltage -12V
    Drain current -5.3A
    Pulsed drain current -20A
    Power dissipation 1.25W
    On-state resistance 59mΩ
    Gate charge 18nC