Transistor: N-MOSFET

    Multiples: 1.0
    Minimum quantity: 3.0
    Product code: SI2312BDS-T1-GE3
    Manufacturer: VISHAY
    Manufacturer code: SI2312BDS-T1-GE3
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET

    Mounting SMD
    Case SOT23
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Drain-source voltage 20V
    Drain current 3.9A
    Pulsed drain current 15A
    Power dissipation 480mW
    On-state resistance 31mΩ
    Gate charge 12nC