Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.06W; SOT23

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: SI2308BDS-T1-GE3
    Manufacturer: VISHAY
    Manufacturer code: SI2308BDS-T1-GE3
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    0.92 €

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    Specification for Transistor: N-MOSFET; unipolar; 60V; 1.8A; 1.06W; SOT23

    Mounting SMD
    Case SOT23
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Drain-source voltage 60V
    Drain current 1.8A
    Power dissipation 1.06W
    On-state resistance 192mΩ
    Gate charge 2.3nC