Transistor: N-MOSFET

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: SI1922EDH-T1-GE3
    Manufacturer: VISHAY
    Manufacturer code: SI1922EDH-T1-GE3
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Version
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    0.00 € 0.00 € (wo VAT) 0.0 EUR

    0.00 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: N-MOSFET

    Mounting SMD
    Case SC70
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Version ESD
    Drain-source voltage 20V
    Drain current 1.3A
    Pulsed drain current 4A
    Power dissipation 800mW
    On-state resistance 198mΩ
    Gate charge 2.5nC