Transistor: P-MOSFET

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: SI1025X-T1-GE3
    Manufacturer: VISHAY
    Manufacturer code: SI1025X-T1-GE3
    • Mounting
    • Case
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Version
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    0.00 € 0.00 € (wo VAT) 0.0 EUR

    0.00 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: P-MOSFET

    Mounting SMD
    Case SC89, SOT563
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor P-MOSFET
    Kind of channel enhanced
    Version ESD
    Drain-source voltage -60V
    Drain current -0.19A
    Pulsed drain current -0.65A
    Power dissipation 130mW
    On-state resistance 6Ω
    Gate charge 1.7nC