Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W
Multiples:
1.0
Minimum quantity:
1.0
Product code:
SGT120R65AL
Manufacturer: STMicroelectronics
Manufacturer code: SGT120R65AL
Product downloads
Specification for Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W
Mounting | SMD |
Case | PowerFLAT 5x6 |
Kind of package | tape |
Polarisation | unipolar |
Type of transistor | N-JFET |
Kind of channel | enhanced |
Features of semiconductor devices | Kelvin terminal |
Technology | GaN |
Drain-source voltage | 650V |
Drain current | 9A |
Pulsed drain current | 36A |
Power dissipation | 192W |
On-state resistance | 120mΩ |
Gate charge | 3nC |