Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; 270W; HIP247™

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: SCT30N120
    Manufacturer: STMicroelectronics
    Manufacturer code: SCT30N120
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Technology
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; 270W; HIP247™

    Mounting THT
    Case HIP247™
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Technology SiC, SiCFET
    Drain-source voltage 1.2kV
    Drain current 34A
    Pulsed drain current 90A
    Power dissipation 270W
    On-state resistance 100mΩ
    Gate charge 105nC