Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: S2M0080120D
    Manufacturer: SMC DIODE SOLUTIONS
    Manufacturer code: S2M0080120D
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    17.44 € 17.44 € (wo VAT) 17.44 EUR

    17.44 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W

    Mounting THT
    Case TO247-3
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology SiC
    Drain-source voltage 1.2kV
    Drain current 29A
    Pulsed drain current 82A
    Power dissipation 231W
    On-state resistance 137mΩ
    Gate charge 54nC