Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW

    Multiples: 1.0
    Minimum quantity: 3.0
    Product code: QS5U13TR
    Manufacturer: ROHM SEMICONDUCTOR
    Manufacturer code: QS5U13TR
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Kind of channel
    • Version
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW

    Mounting SMD
    Case TSOT25
    Kind of package reel, tape
    Polarisation unipolar
    Kind of channel enhanced
    Version ESD
    Drain-source voltage 30V
    Drain current 2A
    Pulsed drain current 8A
    Power dissipation 900mW
    On-state resistance 100mΩ
    Gate charge 3.9nC