Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: PJW4N06A_R2_00001
    Manufacturer: PanJit Semiconductor
    Manufacturer code: PJW4N06A_R2_00001
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223

    Mounting SMD
    Case SOT223
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Drain-source voltage 60V
    Drain current 4A
    Pulsed drain current 8A
    Power dissipation 3.1W
    On-state resistance 110mΩ
    Gate charge 5.1nC