Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: NTHL060N090SC1
    Manufacturer: ON SEMICONDUCTOR
    Manufacturer code: NTHL060N090SC1
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W

    Mounting THT
    Case TO247-3
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology SiC
    Drain-source voltage 900V
    Drain current 32A
    Pulsed drain current 184A
    Power dissipation 110W
    On-state resistance 60mΩ
    Gate charge 87nC