Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 125A; 28W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: NTH4L080N120SC1
    Manufacturer: ON SEMICONDUCTOR
    Manufacturer code: NTH4L080N120SC1
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    18.48 € 18.48 € (wo VAT) 18.48 EUR

    18.48 €

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    Specification for Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 21A; Idm: 125A; 28W

    Mounting THT
    Case TO247-4
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices Kelvin terminal
    Technology SiC
    Drain-source voltage 1.2kV
    Drain current 21A
    Pulsed drain current 125A
    Power dissipation 28W
    On-state resistance 80mΩ
    Gate charge 56nC