Transistor: IGBT; BiMOSFET™; 600V; 72A; 520W; SMPD
Multiples:
1.0
Minimum quantity:
1.0
Product code:
MMIX1X200N60B3H1
Manufacturer: IXYS
Manufacturer code: MMIX1X200N60B3H1
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Specification for Transistor: IGBT; BiMOSFET™; 600V; 72A; 520W; SMPD
Mounting | SMD |
Case | SMPD |
Kind of package | tube |
Type of transistor | IGBT |
Technology | BiMOSFET™, GenX3™, XPT™ |
Turn-on time | 140ns |
Power dissipation | 520W |
Gate-emitter voltage | ±20V |
Pulsed collector current | 1kA |
Collector current | 72A |
Gate charge | 315nC |
Collector-emitter voltage | 600V |
Turn-off time | 395ns |