Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: MMIX1G120N120A3V1
    Manufacturer: IXYS
    Manufacturer code: MMIX1G120N120A3V1
    • Mounting
    • Case
    • Kind of package
    • Type of transistor
    • Technology
    • Technology
    • Technology
    • Turn-on time
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage
    • Turn-off time

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    Specification for Transistor: IGBT; BiMOSFET™; 1.2kV; 105A; 400W; SMPD

    Mounting SMD
    Case SMPD
    Kind of package tube
    Type of transistor IGBT
    Technology BiMOSFET™, GenX3™, PT
    Turn-on time 105ns
    Power dissipation 400W
    Gate-emitter voltage ±20V
    Pulsed collector current 700A
    Collector current 105A
    Gate charge 420nC
    Collector-emitter voltage 1.2kV
    Turn-off time 1365ns