Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Multiples:
1.0
Minimum quantity:
1.0
Product code:
LGE3M45170B
Manufacturer: LUGUANG ELECTRONIC
Manufacturer code: LGE3M45170B
Product downloads
Specification for Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Mounting | THT |
Case | TO247-3 |
Kind of package | tube |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Technology | SiC |
Drain-source voltage | 1.7kV |
Drain current | 48A |
Pulsed drain current | 160A |
Power dissipation | 520W |
On-state resistance | 90mΩ |
Gate charge | 54nC |