Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 117A; 300W
Multiples:
1.0
Minimum quantity:
1.0
Product code:
LGE3M40120Q
Manufacturer: LUGUANG ELECTRONIC
Manufacturer code: LGE3M40120Q
Product downloads
Specification for Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 117A; 300W
Mounting | THT |
Case | TO247-4 |
Kind of package | tube |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Features of semiconductor devices | Kelvin terminal |
Technology | SiC |
Drain-source voltage | 1.2kV |
Drain current | 39A |
Pulsed drain current | 117A |
Power dissipation | 300W |
On-state resistance | 69mΩ |
Gate charge | 145nC |