Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: LGE3M160120E
    Manufacturer: LUGUANG ELECTRONIC
    Manufacturer code: LGE3M160120E
    • Mounting
    • Case
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W

    Mounting SMD
    Case D2PAK
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology SiC
    Drain-source voltage 1.2kV
    Drain current 11A
    Pulsed drain current 38A
    Power dissipation 127W
    On-state resistance 0.285Ω
    Gate charge 42nC