Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Multiples:
1.0
Minimum quantity:
1.0
Product code:
IXTY1R4N100P
Manufacturer: IXYS
Manufacturer code: IXTY1R4N100P
Product downloads
Specification for Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.4A; Idm: 3A; 63W
Mounting | SMD |
Case | TO252 |
Kind of package | tube |
Polarisation | unipolar |
Type of transistor | N-MOSFET |
Kind of channel | enhanced |
Features of semiconductor devices | standard power mosfet |
Technology | Polar™ |
Drain-source voltage | 1kV |
Drain current | 1.4A |
Pulsed drain current | 3A |
Power dissipation | 63W |
On-state resistance | 11.8Ω |
Reverse recovery time | 750ns |
Gate charge | 17.8nC |