Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXTT1N450HV
    Manufacturer: IXYS
    Manufacturer code: IXTT1N450HV
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

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    Specification for Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us

    Mounting SMD
    Case TO268HV
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices standard power mosfet
    Drain-source voltage 4.5kV
    Drain current 1A
    Power dissipation 520W
    On-state resistance 80Ω
    Reverse recovery time 1.75µs
    Gate charge 46nC