Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXTP160N10T
    Manufacturer: IXYS
    Manufacturer code: IXTP160N10T
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

    6.54 € 6.54 € (wo VAT) 6.54 EUR

    6.54 €

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    Specification for Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB

    Mounting THT
    Case TO220AB
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology Trench™
    Drain-source voltage 100V
    Drain current 160A
    Power dissipation 430W
    On-state resistance 7mΩ
    Reverse recovery time 60ns
    Gate charge 132nC