Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXTH3N100P
    Manufacturer: IXYS
    Manufacturer code: IXTH3N100P
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • Reverse recovery time
    • Gate charge

    6.89 € 6.89 € (wo VAT) 6.890000000000001 EUR

    6.89 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns

    Mounting THT
    Case TO247-3
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices standard power mosfet
    Drain-source voltage 1kV
    Drain current 3A
    Power dissipation 125W
    Reverse recovery time 820ns
    Gate charge 36nC