Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A

Multiples: 1.0
Minimum quantity: 1.0
Product code: IXTH06N220P3HV
Manufacturer: IXYS
Manufacturer code: IXTH06N220P3HV
  • Mounting
  • Case
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Features of semiconductor devices
  • Technology
  • Drain-source voltage
  • Drain current
  • Pulsed drain current
  • Power dissipation
  • On-state resistance
  • Reverse recovery time
  • Gate charge

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Specification for Transistor: N-MOSFET; Polar3™; unipolar; 2.2kV; 0.38A; Idm: 1.2A

Mounting THT
Case TO247HV
Kind of package tube
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Features of semiconductor devices standard power mosfet
Technology Polar3™
Drain-source voltage 2.2kV
Drain current 0.38A
Pulsed drain current 1.2A
Power dissipation 104W
On-state resistance 80Ω
Reverse recovery time 1.1µs
Gate charge 10.4nC