Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO3P; 200ns

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXFQ60N60X
    Manufacturer: IXYS
    Manufacturer code: IXFQ60N60X
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

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    Specification for Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO3P; 200ns

    Mounting THT
    Case TO3P
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices ultra junction x-class
    Drain-source voltage 600V
    Drain current 60A
    Power dissipation 890W
    On-state resistance 55mΩ
    Reverse recovery time 200ns
    Gate charge 143nC