Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXFK420N10T
    Manufacturer: IXYS
    Manufacturer code: IXFK420N10T
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Technology
    • Technology
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

    18.31 € 18.31 € (wo VAT) 18.31 EUR

    18.31 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264

    Mounting THT
    Case TO264
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology GigaMOS™, HiPerFET™, Trench™
    Drain-source voltage 100V
    Drain current 420A
    Power dissipation 1670W
    On-state resistance 2.6mΩ
    Reverse recovery time 140ns
    Gate charge 670nC