Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXFA4N100Q
    Manufacturer: IXYS
    Manufacturer code: IXFA4N100Q
    • Mounting
    • Case
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Reverse recovery time
    • Gate charge

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    Specification for Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 150W; TO263AA

    Mounting SMD
    Case TO263AA
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology HiPerFET™
    Drain-source voltage 1kV
    Drain current 4A
    Pulsed drain current 16A
    Power dissipation 150W
    On-state resistance 3Ω
    Reverse recovery time 250ns
    Gate charge 39nC