Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXBT2N250
    Manufacturer: IXYS
    Manufacturer code: IXBT2N250
    • Mounting
    • Case
    • Kind of package
    • Type of transistor
    • Features of semiconductor devices
    • Technology
    • Turn-on time
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage
    • Turn-off time

    21.97 € 21.97 € (wo VAT) 21.97 EUR

    21.97 €

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    Specification for Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO268

    Mounting SMD
    Case TO268
    Kind of package tube
    Type of transistor IGBT
    Features of semiconductor devices high voltage
    Technology BiMOSFET™
    Turn-on time 310ns
    Power dissipation 32W
    Gate-emitter voltage ±20V
    Pulsed collector current 13A
    Collector current 2A
    Gate charge 10.6nC
    Collector-emitter voltage 2.5kV
    Turn-off time 252ns