Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3

Multiples: 1.0
Minimum quantity: 1.0
Product code: IXBH42N170
Manufacturer: IXYS
Manufacturer code: IXBH42N170
  • Mounting
  • Case
  • Kind of package
  • Type of transistor
  • Features of semiconductor devices
  • Technology
  • Technology
  • Turn-on time
  • Power dissipation
  • Gate-emitter voltage
  • Pulsed collector current
  • Collector current
  • Gate charge
  • Collector-emitter voltage
  • Turn-off time

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Specification for Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3

Mounting THT
Case TO247-3
Kind of package tube
Type of transistor IGBT
Features of semiconductor devices high voltage
Technology BiMOSFET™, FRED
Turn-on time 224ns
Power dissipation 360W
Gate-emitter voltage ±20V
Pulsed collector current 300A
Collector current 42A
Gate charge 188nC
Collector-emitter voltage 1.7kV
Turn-off time 1.07µs