Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXBH10N300HV
    Manufacturer: IXYS
    Manufacturer code: IXBH10N300HV
    • Mounting
    • Case
    • Kind of package
    • Type of transistor
    • Features of semiconductor devices
    • Technology
    • Turn-on time
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage
    • Turn-off time

    80.32 € 80.32 € (wo VAT) 80.32000000000001 EUR

    80.32 €

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    Specification for Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV

    Mounting THT
    Case TO247HV
    Kind of package tube
    Type of transistor IGBT
    Features of semiconductor devices high voltage
    Technology BiMOSFET™
    Turn-on time 805ns
    Power dissipation 180W
    Gate-emitter voltage ±20V
    Pulsed collector current 88A
    Collector current 10A
    Gate charge 46nC
    Collector-emitter voltage 3kV
    Turn-off time 2.13µs