Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™

Multiples: 1.0
Minimum quantity: 1.0
Product code: IXBF20N300
Manufacturer: IXYS
Manufacturer code: IXBF20N300
  • Mounting
  • Case
  • Kind of package
  • Type of transistor
  • Features of semiconductor devices
  • Technology
  • Turn-on time
  • Power dissipation
  • Gate-emitter voltage
  • Pulsed collector current
  • Collector current
  • Gate charge
  • Collector-emitter voltage
  • Turn-off time

65.76 € 65.76 € (wo VAT) 65.76 EUR

65.76 €

This combination does not exist.

Add to Cart

Specification for Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™

Mounting THT
Case ISOPLUS i4-pac™ x024c
Kind of package tube
Type of transistor IGBT
Features of semiconductor devices high voltage
Technology BiMOSFET™
Turn-on time 64ns
Power dissipation 150W
Gate-emitter voltage ±20V
Pulsed collector current 130A
Collector current 34A
Gate charge 105nC
Collector-emitter voltage 3kV
Turn-off time 300ns