Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IXA30PG1200DHGLB
    Manufacturer: IXYS
    Manufacturer code: IXA30PG1200DHGLB
    • Case
    • Electrical mounting
    • Semiconductor structure
    • Max. off-state voltage
    • Technology
    • Technology
    • Type of module
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Topology
    • Collector current

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    Specification for Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV

    Case SMPD-B
    Electrical mounting SMT
    Semiconductor structure diode/transistor
    Max. off-state voltage 1.2kV
    Technology ISOPLUS™, Sonic FRD™
    Type of module IGBT
    Power dissipation 150W
    Gate-emitter voltage ±20V
    Pulsed collector current 75A
    Topology IGBT half-bridge
    Collector current 30A