Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV

Multiples: 1.0
Minimum quantity: 1.0
Product code: IXA30PG1200DHGLB
Manufacturer: IXYS
Manufacturer code: IXA30PG1200DHGLB
  • Case
  • Electrical mounting
  • Semiconductor structure
  • Max. off-state voltage
  • Technology
  • Technology
  • Type of module
  • Power dissipation
  • Gate-emitter voltage
  • Pulsed collector current
  • Topology
  • Collector current

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Specification for Module: IGBT; diode/transistor; IGBT half-bridge; Urmax: 1.2kV

Case SMPD-B
Electrical mounting SMT
Semiconductor structure diode/transistor
Max. off-state voltage 1.2kV
Technology ISOPLUS™, Sonic FRD™
Type of module IGBT
Power dissipation 150W
Gate-emitter voltage ±20V
Pulsed collector current 75A
Topology IGBT half-bridge
Collector current 30A