Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IRLB3813PBF
    Manufacturer: Infineon (IRF)
    Manufacturer code: IRLB3813PBF
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    2.21 €

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    Specification for Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB

    Mounting THT
    Case TO220AB
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices logic level
    Technology HEXFET®
    Drain-source voltage 30V
    Drain current 260A
    Power dissipation 230W
    On-state resistance 1.95mΩ
    Gate charge 57nC