Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; Idm: 360A

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IPD90N03S4L03ATMA1
    Manufacturer: INFINEON TECHNOLOGIES
    Manufacturer code: IPD90N03S4L03ATMA1
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 90A; Idm: 360A

    Mounting SMD
    Case DPAK
    Kind of package reel
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology OptiMOS™ T2
    Drain-source voltage 30V
    Drain current 90A
    Pulsed drain current 360A
    Power dissipation 94W
    On-state resistance 3.3mΩ
    Gate charge 75nC