Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IPD60R600P7ATMA1
    Manufacturer: INFINEON TECHNOLOGIES
    Manufacturer code: IPD60R600P7ATMA1
    • Mounting
    • Case
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Version
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate-source voltage
    • Gate charge

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    Specification for Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3

    Mounting SMD
    Case PG-TO252-3
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices ESD protected gate
    Technology CoolMOS™ P7
    Version ESD
    Drain-source voltage 600V
    Drain current 4A
    Pulsed drain current 16A
    Power dissipation 30W
    On-state resistance 600mΩ
    Gate-source voltage ±20V
    Gate charge 9nC