Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IPD50P04P4L11ATMA2
    Manufacturer: INFINEON TECHNOLOGIES
    Manufacturer code: IPD50P04P4L11ATMA2
    • Mounting
    • Case
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

    0.00 € 0.00 € (wo VAT) 0.0 EUR

    0.00 €

    This combination does not exist.

    Add to Cart

    Specification for Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -40A; 58W

    Mounting SMD
    Case PG-TO252-3-313
    Polarisation unipolar
    Type of transistor P-MOSFET
    Kind of channel enhanced
    Technology OptiMOS® -P2
    Drain-source voltage -40V
    Drain current -40A
    Pulsed drain current -200A
    Power dissipation 58W
    On-state resistance 10.6mΩ
    Gate charge 14nC