Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IPB80N06S2L07ATMA3
    Manufacturer: INFINEON TECHNOLOGIES
    Manufacturer code: IPB80N06S2L07ATMA3
    • Mounting
    • Case
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; unipolar; 55V; 80A; 210W; PG-TO263-3

    Mounting SMD
    Case PG-TO263-3
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology OptiMOS™
    Drain-source voltage 55V
    Drain current 80A
    Power dissipation 210W
    On-state resistance 6.7mΩ
    Gate charge 95nC