Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IPB180N04S4H0ATMA1
    Manufacturer: INFINEON TECHNOLOGIES
    Manufacturer code: IPB180N04S4H0ATMA1
    • Mounting
    • Case
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Specification for Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W

    Mounting SMD
    Case PG-TO263-7
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology OptiMOS™ T2
    Drain-source voltage 40V
    Drain current 180A
    Power dissipation 250W
    On-state resistance 1.1mΩ
    Gate charge 173nC