Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: IPB029N06N3GATMA1
    Manufacturer: INFINEON TECHNOLOGIES
    Manufacturer code: IPB029N06N3GATMA1
    • Mounting
    • Case
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance

    0.00 € 0.00 € (wo VAT) 0.0 EUR

    0.00 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3

    Mounting SMD
    Case PG-TO263-3
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology OptiMOS™ 3
    Drain-source voltage 60V
    Drain current 120A
    Power dissipation 188W
    On-state resistance 2.9mΩ