Transistor: N-JFET/N-MOSFET; GaN; unipolar; cascode; 650V; 3.9A

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: GPT65C0YME
    Manufacturer: MGT BRIGHTEK
    Manufacturer code: GPT65C0YME
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • On-state resistance
    • Gate-source voltage
    • Gate charge
    • Kind of transistor

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    Specification for Transistor: N-JFET/N-MOSFET; GaN; unipolar; cascode; 650V; 3.9A

    Mounting SMD
    Case DFN8080
    Kind of package tape
    Polarisation unipolar
    Type of transistor N-JFET/N-MOSFET
    Technology GaN
    Drain-source voltage 650V
    Drain current 3.9A
    Pulsed drain current 27A
    On-state resistance 230mΩ
    Gate-source voltage ±18V
    Gate charge 16nC
    Kind of transistor cascode