Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: G3R20MT12K
    Manufacturer: GeneSiC Semiconductor Inc.
    Manufacturer code: G3R20MT12K
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • On-state resistance

    40.26 € 40.26 € (wo VAT) 40.26 EUR

    40.26 €

    This combination does not exist.

    Add to Cart

    Product downloads

    Specification for Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 90A; Idm: 240A; 542W

    Mounting THT
    Case TO247-4
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices Kelvin terminal
    Technology SiC
    Drain-source voltage 1.2kV
    Drain current 90A
    Pulsed drain current 240A
    On-state resistance 20mΩ