Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 53W; TO247-3

    Multiples: 1.0
    Minimum quantity: 1.0
    Product code: G2R1000MT17D
    Manufacturer: GeneSiC Semiconductor Inc.
    Manufacturer code: G2R1000MT17D
    • Mounting
    • Case
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Technology
    • Drain-source voltage
    • Drain current
    • Pulsed drain current
    • Power dissipation
    • On-state resistance

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    Specification for Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4A; Idm: 8A; 53W; TO247-3

    Mounting THT
    Case TO247-3
    Kind of package tube
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Technology SiC
    Drain-source voltage 1.7kV
    Drain current 4A
    Pulsed drain current 8A
    Power dissipation 53W
    On-state resistance 1Ω