Transistor: N-MOSFET; unipolar; 60V; 37.1A; Idm: 210A; 121W; TO220-3

Multiples: 1.0
Minimum quantity: 1.0
Product code: FQP50N06L
Manufacturer: ON SEMICONDUCTOR
Manufacturer code: FQP50N06L
  • Mounting
  • Case
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Technology
  • Drain-source voltage
  • Drain current
  • Pulsed drain current
  • Power dissipation
  • On-state resistance
  • Gate charge

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Specification for Transistor: N-MOSFET; unipolar; 60V; 37.1A; Idm: 210A; 121W; TO220-3

Mounting THT
Case TO220-3
Kind of package tube
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Technology QFET®
Drain-source voltage 60V
Drain current 37.1A
Pulsed drain current 210A
Power dissipation 121W
On-state resistance 21mΩ
Gate charge 24.5nC